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超高真空二維移動遮罩式雷射分子束磊晶鍍膜系統(Pulse Laser Deposition System)

 

超高真空二維移動遮罩式雷射分子束磊晶鍍膜系統

(Pulse Laser Deposition System)

PLD

 

壹、儀器設備說明 (規格)

●  Growth Chamber:

  1. Arrival pressure: at least up to 2.7×10-7Pa (2×10-9Torr)
  2. Chamber size: Spherical chamber with diameter >250mm.
  3. Pumping system: Main-pumping (Ceramic bearing type Turbo Molecular Pump): >300 L/s, Sub-pumping (Rotary Pump): >250 L/m
  4. Gauges: ion gauge x 1, convectron gauge x 2
  5. Basical ports: with pump mount ports, RHEED mount and image ports, gauge ports, substrate and target transfer ports, monitor ports, combinational mask positioning view ports.
  6. Laser beam introduction port: with transmittance > 90% for KrF or ArF.
  7. Laser beam introduction port.

●  Substrate and heating system:

  1. Laser diode heating system: Substrate temperature can be retained at least 1000 degree C for a 10mm x 10mm size.
  2. Laser beam outpower: 120W
  3. Laser beam emission length: 807 nm
  4. Temperature holding at 1000 degree C over 1 hour.
  5. Temperature stability: <±1 degree C.
  6. Cooling system.
  7. With pyrometer.

●  Target manipulator unit:

  1. At least 6 targets.
  2. Size: 20mm
  3. With rotation and revolution system.

●  Combinatorial mask unit:

  1. Automatic and synchronous controlled masks in x-y dimensions.
  2. Mask patterns are designable.
  3. Masks are changeable.
  4. Masks can be worked at 1000 degree C.

●  Scanning reflection high-energy electron diffraction unit:

  1. Acceleration voltage: 30kV
  2. With standard bearing type turbo molecular pump
  3. Corresponding power supply
  4. CCD camera unit and image processing system with computer.
  5. Operation up to 10-6 Torr.

●  Load-Lock chamber:

  1. Ultimate pressure: 6.7x10-5 Pa (5x10-7 Torr)
  2. Pumping system: Main-pumping (Turbo Molecular Pump): >80 L/s, Sub-pumping (Rotary pump): >160 L/m
  3. Gauges: ion gauge x 1, convectron gauge x 1
  4. With x-y sample transport for additional chambers in future.
  5. With venting line.

●  Substrate and target transfer:

  1. Transferring substrates and targets without venting main chamber.

●  Laser system:

  1. pulse energy: 400 mJ
  2. wavelength: 248nm
  3. average power: 7W
  4. max rep. rate: 20Hz
  5. with cooling system

●  Control and measurement system:

  1. Programmable logic controller:
    1.Combinatorial thin film preparation by GUI.Completely synchronously control of above items for Combinatorial thin film preparation.
    2. Read, correct save and execute the recipe in the sequencer and the files managed by computer.
    3. Computer can monitor RHEED patterns observed by CCD camera, and the pattern (graphics data) and RHEED oscillation (binary/text file) can be saved.
  2. LabView based control software in windows PC:

●  Interlock system:

  1. Vacuum pumping system: Protection against the miss operation of push button on control racks.
  2. Substrate heating mechanism: Substrate heating automatic shutoff function by detection of the shortage of circulating cooling water flow rate.
  3. Blackout: Vacuum hold function by pumping system cutoff. Automatic recovery/reset is not done when power transmission is restarted.
  4. Emergency stop: Master stop function of system with emergency shut down button (EMO) on the control rack.

貳、服務項目:

       ●委託代工製備高品質金屬多層膜與磁性物質

參、取樣、使用應注意事項:

       1、預約時應填寫委託代工單,詳細填寫樣品參數,參數如下:基板材料、基板尺寸、成長材料、薄膜厚度、樣品數目、保護層有無。主要提供鐵磁性薄膜材料如PyGdFeCoCoGd、lr、Mn和金屬薄膜如CuAl,樣品大小為1cm*1cm應於委託代工7日前將樣品交付儀器管理人。

       2、代工一天,僅能成長一批樣品,依據時段長短計費。

       3、若濺鍍材料非實驗室所有,則需自備靶材,且須儀器管理人同意。

       4、靶材若易揮發,或易污染其他靶財,恕不予代工。

       5、如違反上述規定者,恕不予代工。

肆、使用時段與預約:

       應於預計代工時程14天前到儀設中心網站預約。

       每周一、二 、三、四 09:00-17:00開放代工。

伍、訓練課程規定辦法

       因本精密儀器操作之特殊工藝要求,不開放自行操作,暫無提供訓練課程。請委託代工人依規定預約代工。如欲參與磊晶過程,請與儀器管理人事先聯絡。

陸、收費辦法及標準(含訓練課程)

       校內學術(有單位配合)1500/小時

       校內學術(無單位配合)2000/小時

       校外學術:2500/小時

       業界:3500/小時。

柒、儀器聯絡與管理人:

       聯絡人:呂浚銘、張為智    分機:31363#209 

       諮詢教授:黃榮俊   分機35266

       信箱jcahuang@mail.ncku.edu.tw

       儀器放置地點:儀設大樓10113

捌、其他注意事項:  

       脈衝雷射沉積製程利用高功率脈衝雷射光,經聚焦後入射至腔體內轟擊靶材表面,使其因吸收高能量快速蒸發形成一團具有高動能的電漿氣體,沉積至待鍍的基板上形成薄膜,如下圖所示。此成長方式為一非平衡態的薄膜製程,故基座上薄膜成分比例幾乎與靶材相同,適用於成長多元複合材料或者摻雜材料之薄膜。薄膜可由脈衝雷射所轟擊發數精確掌握其厚度,加上生長條件的控制,可成長出高品質的磊晶薄膜。